›› 2017, Vol. 37 ›› Issue (2): 93-100.doi: 10.16708/j.cnki.1000-758X.2017.0016

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DamagemechanismofthehighelectronmobilitytransistorinducedbyHPMfromdrainelectrode

 XUE  Pei-Wen, FANG  Jin-Yong, LI  Zhi-Peng, SUN  Jing*   

  1. ChinaAcademyofSpaceTechnology(Xi′an),Xi′an710100,China
  • Received:2016-10-25 Revised:2016-11-30 Online:2017-06-25 Published:2017-01-24

Abstract: Atwo-dimensionalelectro-thermalmodelofthetypicalHEMTwasestablishedbysimulationsoftwareSentaurus-TCAD.Mobilitydegradationinhighelectricfield,Avalanchegenerateeffectandself-heatingeffectwereconsidered,byanalyzingthedistributionsandvariationsoftheelectricfield,thecurrentdensityandthetemperature,adetailedinvestigationofthedamageeffectandmechanismofhighpowermicrowave(HPM)onAlGaAs/GaAspseudomorphichigh-electron-mobilitytransistor(pHEMT)undertheinjectionof14.9GHzequivalentvoltagesignalsfromthedrainelectrodewasperformed.Thesimulationresultssuggestthatintrinsicexcitation,avalanchebreakdown,thermalbreakdownallcontributetodamageprocess,thetemperaturebehavesasperiodic“increasing-decreasing-increasing”oscillationandthewholetrendcontinuouslyincreaseswithtimeanditdecreasesduringpositivehalfcycleandincreasesduringnegativecycle.Thegatecurrentdensityappearsdoublepeakphenomenonbecauseavalanchebreakdownandthermalexcitation.Heataccumulationoccursduringthenegativehalfcycleandbelowthegatenearthedrainsideismostsusceptibletoburnout.Meanwhile,thedrainterminalseriesresistancecanenhancethecapabilityofthedevicetowithstandmicrowavedamageeffectively.

Key words: highpowermicrowave, highelectronmobilitytransistor, damagemechanism, drainelectrode, failureanalysis